The bandgap tunability of (Si)GeSn group IV semiconductors opens a new era in Si-technology. Depending on the Si/Sn contents, direct and indirect bandgaps in the range of 0.4-0.8 eV can be obtained, offering a broad spectrum of both photonic and low power electronic applications. In this work, we systematically studied capacitance-voltage characteristics of high-k/metal gate stacks formed on GeSn and SiGeSn alloys with Sn-contents ranging from 0 to 14 at.
作者：C, Schulte-Braucks；K, Narimani；S, Glass；N, von den Driesch；J M, Hartmann；Z, Ikonic；V V, Afanas'ev；Q T, Zhao；S, Mantl；D, Buca
来源：ACS applied materials & interfaces 2017 年 9卷 10期
