Black phosphorus (BP) has been recently rediscovered as an elemental two-dimensional (2D) material that shows promising results for next generation electronics and optoelectronics because of its intrinsically superior carrier mobility and small direct band gap. In various 2D field-effect transistors (FETs), the choice of metal contacts is vital to the device performance, and it is a major challenge to reach ultralow contact resistances for highly scaled 2D FETs. Here, we experimentally show the effect of a work function tunable metal contact on the device performance of BP FETs. Using palladium (Pd) as the contact material, we employed the reaction between Pd and H2 to form a Pd-H alloy that effectively increased the work function of Pd and reduced the Schottky barrier height (ΦB) in a BP FET. When the Pd-contacted BP FET was exposed to 5

作者：Yuqiang, Ma；Chenfei, Shen；Anyi, Zhang；Liang, Chen；Yihang, Liu；Jihan, Chen；Qingzhou, Liu；Zhen, Li；Moh R, Amer；Tom, Nilges；Ahmad N, Abbas；Chongwu, Zhou

来源：ACS nano 2017 年 11卷 7期